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Other articles related with "damage effect"：
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76101 |
Yuan-Yuan Xue(薛院院), Zu-Jun Wang(王祖军), Wei Chen(陈伟), Xiao-Qiang Guo(郭晓强), Zhi-Bin Yao(姚志斌), Bao-Ping He(何宝平), Xu Nie(聂栩), Shankun Lai(赖善坤), Gang Huang(黄港), Jiang-Kun Sheng(盛江坤), Wu-Ying Ma(马武英), and Shi-Long Gou(缑石龙) |
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Analysis of displacement damage effects on the charge-coupled device induced by neutrons at Back-n in the China Spallation Neutron Source |
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Chin. Phys. B
2023 Vol.32 (7): 76101-076101
[Abstract]
(120)
[HTML 0 KB]
[PDF 2269 KB]
(75)
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88502 |
Hui Li(李慧), Chang-Chun Chai(柴常春), Yu-Qian Liu(刘彧千), Han Wu(吴涵), Yin-Tang Yang(杨银堂) |
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Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves |
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Chin. Phys. B
2018 Vol.27 (8): 88502-088502
[Abstract]
(551)
[HTML 1 KB]
[PDF 1160 KB]
(199)
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48504 |
Yang Liu(刘阳), Chang-Chun Chai(柴常春), Yin-Tang Yang(杨银堂), Jing Sun(孙静), Zhi-Peng Li(李志鹏) |
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Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave |
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Chin. Phys. B
2016 Vol.25 (4): 48504-048504
[Abstract]
(643)
[HTML 0 KB]
[PDF 1379 KB]
(644)
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48503 |
Xiao-Wen Xi(席晓文), Chang-Chun Chai(柴常春), Gang Zhao(赵刚), Yin-Tang Yang(杨银堂), Xin-Hai Yu(于新海), Yang Liu(刘阳) |
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Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse |
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Chin. Phys. B
2016 Vol.25 (4): 48503-048503
[Abstract]
(707)
[HTML 1 KB]
[PDF 1762 KB]
(433)
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